By Michel Houssa, Athanasios Dimoulas, Alessandro Molle
"Major advancements within the semiconductor are at the horizon by using 2nd fabrics akin to graphene and transition steel dichalcogenides for built-in circuits. This e-book offers the 1st finished remedy of the sphere with an emphasis on purposes in nanoelectronic units. Chapters are divided via the 3 significant households of such fabrics, protecting graphene for analog and photonic functions, MoS2 (molybdenum disulfide) for good judgment functions and novel fabrics resembling silicene, germanene, stanene and phosphorene"-- Read more...
summary: "Major advancements within the semiconductor are at the horizon by using 2nd fabrics equivalent to graphene and transition steel dichalcogenides for built-in circuits. This ebook offers the 1st accomplished remedy of the sphere with an emphasis on functions in nanoelectronic units. Chapters are divided through the 3 significant households of such fabrics, masking graphene for analog and photonic functions, MoS2 (molybdenum disulfide) for good judgment functions and novel fabrics resembling silicene, germanene, stanene and phosphorene"
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Extra resources for 2D materials for nanoelectronics
Indb 14 19-02-2016 14:24:14 Theory of the Structural, Electronic and Transport Properties of Graphene The phase function ωk is a sum over the NN phase factors: ωk = ∑e ik ⋅ bi . 26) 3 cos k ⋅ a i − ε k i =1 (t − sε k )ω k ε pz + 2t ′ ∑ where the two solutions of this equation correspond to the valence (α = +1) and the conduction band (α = −1). 28) and 3k x a kya f (k ) = 2 cos(k y a) + 4 cos cos . 29) With NNN interactions included and using the fact that s ≈ 0, we obtain ε k ≈ ε pz + αt 3 + f (k ) + t ′f (k ).
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2D materials for nanoelectronics by Michel Houssa, Athanasios Dimoulas, Alessandro Molle